2SD1767 0.7a , 80v npn plastic encapsulated transistor elektronische bauelemente 10-nov-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features high breakdown voltage and current excellent dc current gain linearity complementary to 2sb1189 classification of h fe product-rank 2SD1767-p 2SD1767-q 2SD1767-r range 82~180 120~270 180~390 marking dcp dcq dcr package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current-continuous i c 700 ma collector power dissipation p c 500 mw maximum junction to ambient r ja 250 c / w junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 80 - - v i c =50 a, i e =0 collector-emitter breakdown voltage v (br)ceo 80 - - v i c =2ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =50 a, i c =0 collector cut-off current i cbo - - - 0.5 a v cb =50v, i e =0 emitter cut-off current i ebo - - 0.5 a v eb =4v, i c =0 dc current gain h fe 82 - 390 v ce =3v, i c = 100ma collector-emitter saturation voltage v ce(sat) - - 0.4 v i c =500ma, i b = 50ma transition frequency f t - 120 - mhz v ce =10v,i c =50ma,f=100mh z collector output capacitance c ob - 10 - pf v cb =10v, i e =0, f=1mhz sot-89 a e c d b k h f g l j 1 2 3 4 b c e ref. millimeter ref. millimeter min. max. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.25 2.60 k 0.32 0.52 e 1.50 1.85 l 0.35 0.44 f 0.89 1.20
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